Enabling Lower-Power Charge-Domain Nonvolatile In-Memory Computing With Ferroelectric FETs

Compute-in-memory (CiM) is a promising approach to alleviating the memory wall problem for domain-specific applications. Compared current-domain CiM solutions, charge-domain shows opportunity higher energy efficiency and resistance device variations. However, area occupation standby leakage power of existing SRAM-based (CD-CiM) are high. This brief proposes first concept analysis CD-CiM using nonvolatile (NVM) devices. The design implementation performance evaluation based on proposed 2-transistor-1-capacitor (2T1C) macro ferroelectric field-effect-transistors (FeFETs), which free from much denser than SRAM solution. With supply voltage between 0.45V 0.90V, operating frequency 100MHz 1.0GHz, binary neural network application simulations show over 47%, 60%, 64% consumption reduction CD-CiM, CiM, RRAM-based respectively. For classifications in MNIST CIFAR-10 data sets, FeFET-based achieves an accuracy 95% 80%,